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Growth of InAIGaAs strained quantum well structures for reliable 0.8 μm lasers

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Bibliographic Details
Published in:Journal of electronic materials 1994-02, Vol.23 (2), p.207-216
Main Authors: Baumann, J. A., Dalby, R. J., Waters, R. G., Yellen, S. L., Harding, C., Shepard, A.
Format: Article
Language:English
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ISSN:0361-5235
1543-186X
DOI:10.1007/BF02655271