MBE growth and properties of GaN and AlxGa1−xN on GaN/SiC substrates

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Bibliographic Details
Published in:Journal of electronic materials 1996-05, Vol.25 (5), p.793-797
Main Authors: Johnson, M. A. L., Fujita, Shizuo, Rowland, W. H., Hughes, W. C., He, Y. W., El-Masry, N. A., Cook, J. W., Schetzina, J. F., Ren, J., Edmond, J. A.
Format: Article
Language:English
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ISSN:0361-5235
1543-186X
DOI:10.1007/BF02666638