Impurity induced disordering of GaInAs quantum wells with barriers of AlGaInAs or of GaInAsP

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Bibliographic Details
Published in:Journal of electronic materials 1991-12, Vol.20 (12), p.973-978
Main Authors: MARSH, J. H, BRADSHAW, S. A, BRYCE, A. C, GWILLIAM, R, GLEW, R. W
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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ISSN:0361-5235
1543-186X
DOI:10.1007/BF03030191