Terahertz Generation Using Implanted InGaAs Photomixers and Multi-wavelength Quantum Dot Lasers

• Published in: Nano-micro letters 2012-01, Vol.4 (1), p.10-13
• Main Authors: Hou, Y., Liu, J. R., Buchanan, M., Thorpe, A. J. Spring, Poole, P. J., Liu, H. C., Wu, Ke, Roorda, Sjoerd, Zhang, X. P.
• Format: Article
• Language: English
• Subjects: Engineering; Nanoscale Science and Technology; Nanotechnology; Nanotechnology and Microengineering
• ISSN: 2150-5551; 2311-6706; 2150-5551
• DOI: 10.1007/BF03353685

We report on a study of terahertz(THz) generation using implanted In Ga As photomixers and multi-wavelength quantum dot lasers. We carry out In Ga As materials growth, optical characterization, device design and fabrication, and photomixing experiments. This approach is capable of generating a comb of electromagnetic radiation from microwave to terahertz. For shortening photomixer carrier lifetime, we employ proton implantation into an epitaxial layer of lattice matched In Ga As grown on InP. Under a 1.55 μm multimode In GaAs/In GaAsP quantum dot laser excitation, a frequency comb with a constant frequency spacing of 50 GHz generated on the photomixer is measured, which corresponds to the beats of the laser longitudinal modes. The measurement is performed with a Fourier transform infrared spectrometer. This approach affords a convenient method to achieve a broadband multi-peak coherent THz source.