Reflection high-energy electron diffraction real-time monitoring of an etch process implemented in molecular beam epitaxy technology : hydrogen chloride versus GaAs(001) epilayers

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Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 1998-09, Vol.67 (3), p.357-359
Main Authors: HAMOUDI, A, SOGAWA, T, SAITOH, T, YUMOTO, J
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Physics
Structure and morphology
thickness
Surface cleaning, etching, patterning
Surface treatments
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
Thin film structure and morphology
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ISSN:0947-8396
1432-0630
DOI:10.1007/s003390050784