Influence of resonant tunneling on the imaging of atomic defects on InAs(110) surfaces by low-temperature scanning tunneling microscopy

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Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 1998-03, Vol.66 (7), p.S171-S174
Main Authors: Depuydt, A., Maslova, N.S., Panov, V.I., Rakov, V.V., Savinov, S.V., Van Haesendonck, C.
Format: Article
Language:English
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ISSN:0947-8396
1432-0630
DOI:10.1007/s003390051124