Soft limiting circuit implementable with a single multi-walled carbon nanotube

Dispersed growth techniques are applied to grow carbon nanotubes between metal pads on silicon wafers. Process conditions are tuned to yield nanotube devices having only one multi-walled carbon nanotube connecting the metal pads. The nonlinear transfer characteristics of these devices are often acco...

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Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 2010-07, Vol.100 (1), p.193-196
Main Authors: Chen, Ming-Huei, Ting, Jyh-Hua, Yang, Bo-Zhi, Yang, Sheng-Ying, Li, Tsung-Lung
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Condensed Matter Physics
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science
rheology
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in multilayers, nanoscale materials and structures
Exact sciences and technology
Machines
Manufacturing
Materials science
Nanoscale materials and structures: fabrication and characterization
Nanotechnology
Nanotubes
Optical and Electronic Materials
Physics
Physics and Astronomy
Processes
Surfaces and Interfaces
Thin Films
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Summary:Dispersed growth techniques are applied to grow carbon nanotubes between metal pads on silicon wafers. Process conditions are tuned to yield nanotube devices having only one multi-walled carbon nanotube connecting the metal pads. The nonlinear transfer characteristics of these devices are often accompanied with high impedance and low conduction current. These attributes can be utilized for a soft limiting circuit with impedance much higher than conventional silicon-based implementations.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-010-5695-z