Performance improvement of phase-change memory cell with Ge2Sb2Te5-HfO2 composite films

The phase-change characteristics of Ge 2 Sb 2 Te 5 (GST) films for phase-change random access memory (PCM) devices were improved by incorporating HfO 2 into GST film using cosputtering at room temperature. Phase separation (GST-rich nanocrystals were surrounded by HfO 2 -rich amorphous phase) has be...

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Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 2010-06, Vol.99 (4), p.767-770
Main Authors: Song, Sannian, Song, Zhitang, Liu, Bo, Wu, Liangcai, Feng, Songlin
Format: Article
Language:English
Subjects:
Applied sciences
Characterization and Evaluation of Materials
Condensed Matter Physics
Electronics
Exact sciences and technology
Integrated circuits
Integrated circuits by function (including memories and processors)
Machines
Manufacturing
Nanotechnology
Optical and Electronic Materials
Physics
Physics and Astronomy
Processes
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Surfaces and Interfaces
Thin Films
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Summary:The phase-change characteristics of Ge 2 Sb 2 Te 5 (GST) films for phase-change random access memory (PCM) devices were improved by incorporating HfO 2 into GST film using cosputtering at room temperature. Phase separation (GST-rich nanocrystals were surrounded by HfO 2 -rich amorphous phase) has been observed in annealed GST-HfO 2 composite films and the segregated domains exhibited a relatively uniform size. The reduced reset voltage of GST-HfO 2 based cell was due to the reduced programming volume by incorporating HfO 2 into GST. This work clearly reveals the highly promising potential of GST-HfO 2 composite films for application in PCM.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-010-5708-y