Leakage current reduction in junctionless tunnel FET using a lightly doped source

In this paper, we explain the problem of dramatic OFF-state leakage in junctionless tunnel field effect transistor (JLTFET) for a channel thickness greater than 10 nm. In JLTFET, with channel width greater than 10 nm, the depletion region primarily remains confined below the dielectric–semiconductor...

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Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 2015-03, Vol.118 (4), p.1527-1533
Main Authors: Basak, Shibir, Asthana, Pranav Kumar, Goswami, Yogesh, Ghosh, Bahniman
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Condensed Matter Physics
Machines
Manufacturing
Nanotechnology
Optical and Electronic Materials
Physics
Physics and Astronomy
Processes
Surfaces and Interfaces
Thin Films
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Summary:In this paper, we explain the problem of dramatic OFF-state leakage in junctionless tunnel field effect transistor (JLTFET) for a channel thickness greater than 10 nm. In JLTFET, with channel width greater than 10 nm, the depletion region primarily remains confined below the dielectric–semiconductor interface. Hence, we tend to incur significant leakage through the center of the device. With the help of 2D device simulations, we demonstrate that the cause of the leakage current is predominantly due to thermal injection in the source region and is concentrated through the center of the device. We suggest a technique of using a lightly doped source region, below the p-gate to increase the barrier and prevent any leakage. The proposed alteration records an improved I ON / I OFF ratio for JLTFET for a channel of width 20 nm.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-014-8935-9