Electrical properties of palladium-doped CaCu3Ti4O12 ceramics

The effect of doping palladium (Pd) at the Cu site of CaCu 3 Ti 4 O 12 powders (CCPTO) synthesized by sol–gel technique on electrical properties was studied. XRD analysis revealed the formation of CCTO and CCPTO ceramics with some minor quantities of impurities. SEM micrographs revealed that the gra...

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Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 2015-09, Vol.120 (3), p.1011-1021
Main Authors: Singh, Arashdeep, Md Mursalin, Sk, Rana, P., Sen, Shrabanee
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Condensed Matter Physics
Machines
Manufacturing
Nanotechnology
Optical and Electronic Materials
Physics
Physics and Astronomy
Processes
Surfaces and Interfaces
Thin Films
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Summary:The effect of doping palladium (Pd) at the Cu site of CaCu 3 Ti 4 O 12 powders (CCPTO) synthesized by sol–gel technique on electrical properties was studied. XRD analysis revealed the formation of CCTO and CCPTO ceramics with some minor quantities of impurities. SEM micrographs revealed that the grain size decreased with Pd doping. TEM micrographs of CCPTO powder showed the formation of irregular-shaped particles of ~40 nm. The dielectric constant and dielectric loss showed a significant enhancement with Pd doping. A significant decrease in grain-boundary resistance with Pd doping was ascertained by impedance spectroscopy study.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-015-9269-y