Impact of exciton dissociation on the metal-enhanced photoluminescence in ZnO/ZnMgO multiple quantum wells

We have investigated metal-enhanced excitonic emission from ZnO/ZnMgO multiple quantum wells (MQWs) grown by molecular beam epitaxy. Capping of Al nanoparticles results in ~1.5-fold enhancement of photoluminescence (PL) at room temperature. Temperature-dependent PL analysis suggests that exciton dis...

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Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 2015-11, Vol.121 (3), p.1039-1044
Main Authors: He, Haiping, Song, Shiyan, Zhang, Honghai, Pan, Xinhua, Huang, Jingyun, Ye, Zhizhen
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Condensed Matter Physics
Machines
Manufacturing
Nanotechnology
Optical and Electronic Materials
Physics
Physics and Astronomy
Processes
Rapid Communication
Surfaces and Interfaces
Thin Films
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Summary:We have investigated metal-enhanced excitonic emission from ZnO/ZnMgO multiple quantum wells (MQWs) grown by molecular beam epitaxy. Capping of Al nanoparticles results in ~1.5-fold enhancement of photoluminescence (PL) at room temperature. Temperature-dependent PL analysis suggests that exciton dissociation acts as an additional non-radiative recombination channel when the MQWs are capped with metal. The non-radiative recombination rate is found to be larger than the radiative one by ~21-fold. This explains the relatively low enhancement ratio of PL although significant surface plasmon coupling is present.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-015-9491-7