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Effects of rapid thermal annealing on the electrical properties and the strain of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ni/Au gate electrodes

In this study, we investigated the electrical properties and the strain of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ni/Au gate electrodes using the measured capacitance–voltage (C–V) and current–voltage (I–V) characteristics and the polarization effect of the heterostructures....

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Bibliographic Details
Published in:Applied physics. A, Materials science & processing Materials science & processing, 2015-11, Vol.121 (3), p.1271-1276
Main Authors: Zhao, Jingtao, Lin, Zhaojun, Chen, Quanyou, Yang, Ming, Cui, Peng, Lv, Yuanjie, Feng, Zhihong
Format: Article
Language:English
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Summary:In this study, we investigated the electrical properties and the strain of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ni/Au gate electrodes using the measured capacitance–voltage (C–V) and current–voltage (I–V) characteristics and the polarization effect of the heterostructures. We found that the Ni/Au gate electrode showed a good thermal stability when the RTA temperature is below 400 °C; however, with further increase in the annealing temperature, the 2DEG sheet density under the Ni/Au Schottky contact started to decline dramatically, and the device started to exhibit bad pinch-off characteristics after a 700 °C RTA. We also found that the RTA process could change the strain and even damaged the crystal structure of the barrier layer under the gate electrodes.
ISSN:0947-8396
1432-0630
DOI:10.1007/s00339-015-9504-6