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Effects of rapid thermal annealing on the electrical properties and the strain of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ni/Au gate electrodes
In this study, we investigated the electrical properties and the strain of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ni/Au gate electrodes using the measured capacitance–voltage (C–V) and current–voltage (I–V) characteristics and the polarization effect of the heterostructures....
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Published in: | Applied physics. A, Materials science & processing Materials science & processing, 2015-11, Vol.121 (3), p.1271-1276 |
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Main Authors: | , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | In this study, we investigated the electrical properties and the strain of the AlGaN/AlN/GaN heterostructure field-effect transistors with Ni/Au gate electrodes using the measured capacitance–voltage (C–V) and current–voltage (I–V) characteristics and the polarization effect of the heterostructures. We found that the Ni/Au gate electrode showed a good thermal stability when the RTA temperature is below 400 °C; however, with further increase in the annealing temperature, the 2DEG sheet density under the Ni/Au Schottky contact started to decline dramatically, and the device started to exhibit bad pinch-off characteristics after a 700 °C RTA. We also found that the RTA process could change the strain and even damaged the crystal structure of the barrier layer under the gate electrodes. |
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ISSN: | 0947-8396 1432-0630 |
DOI: | 10.1007/s00339-015-9504-6 |