Si homojunction structured near-infrared laser based on a phonon-assisted process

We fabricated several near-infrared Si laser devices (wavelength ∼1300 nm) showing continuous-wave oscillation at room temperature by using a phonon-assisted process induced by dressed photons. Their optical resonators were formed of ridge waveguides with a width of 10 μm and a thickness of 2 μm, wi...

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Bibliographic Details
Published in:Applied physics. B, Lasers and optics Lasers and optics, 2012-06, Vol.107 (3), p.659-663
Main Authors: Kawazoe, T., Ohtsu, M., Akahane, K., Yamamoto, N.
Format: Article
Language:English
Subjects:
Engineering
Lasers
Optical Devices
Optics
Photonics
Physical Chemistry
Physics
Physics and Astronomy
Quantum Optics
Rapid Communication
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Summary:We fabricated several near-infrared Si laser devices (wavelength ∼1300 nm) showing continuous-wave oscillation at room temperature by using a phonon-assisted process induced by dressed photons. Their optical resonators were formed of ridge waveguides with a width of 10 μm and a thickness of 2 μm, with two cleaved facets, and the resonator lengths were 250–1000 μm. The oscillation threshold currents of these Si lasers were 50–60 mA. From near-field and far-field images of the optical radiation pattern, we observed the high directivity which is characteristic of a laser beam. Typical values of the threshold current density for laser oscillation, the ratio of powers in the TE polarization and TM polarization during oscillation, the optical output power at a current of 60 mA, and the external differential quantum efficiency were 1.1–2.0 kA/cm 2 , 8:1, 50 μW, and 1 %, respectively.
ISSN:0946-2171
1432-0649
DOI:10.1007/s00340-012-5053-2