Design and analysis of RF MEMS shunt switch for V-band applications

In this paper, we have designed and simulations of RF MEMS shunt switch. The electro-mechanical and electromagnetic analysis of the switch have been done using COMSOL Multi-physics and HFSS tools. Here, we have designed and simulated the switch with different beam materials of gold, silver, aluminiu...

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Bibliographic Details
Published in:Microsystem technologies : sensors, actuators, systems integration actuators, systems integration, 2022-12, Vol.28 (12), p.2697-2704
Main Authors: Rao, K. Srinivasa, Madhuri, T., Krishna, Leela, Sairam, T. Manish, Vali, Shaik Shoukath, Chand, Ch. Gopi, Sravani, K. Girija
Format: Article
Language:English
Subjects:
Electronics and Microelectronics
Engineering
Instrumentation
Mechanical Engineering
Nanotechnology
Technical Paper
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Summary:In this paper, we have designed and simulations of RF MEMS shunt switch. The electro-mechanical and electromagnetic analysis of the switch have been done using COMSOL Multi-physics and HFSS tools. Here, we have designed and simulated the switch with different beam materials of gold, silver, aluminium ,  and the dielectric material is taken as Si 3 N 4 . The pull-in-voltage acquired for gold material is 3.3 V an air gap of 2 µm which is efficient when contrast with other materials like silver and aluminium. The up and downstate capacitance of the switch is 48fF and 1.19 pF. By using HFSS (High-Frequency Structure Simulator) software we have performed the RF performance analysis such as isolation, insertion, and return losses were measured. The return and insertion losses are − 16.71, − 2.69 dB, and isolation of − 29.39 dB at 40–75 GHz, so the switch is used for V-band applications.
ISSN:0946-7076
1432-1858
DOI:10.1007/s00542-022-05297-6