Formation of gold-capped silicon nanocolumns on silicon substrate

Gold-capped silicon nanocolumns regularly distributed over silicon substrate were obtained. The columns length was roughly 100 nm; their deviation from perpendicular axis was less than 2°. The diameter of the columns was of the order of 10 nm or below of that. The proposed procedure of nanostructuri...

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Bibliographic Details
Published in:Journal of solid state electrochemistry 2011-12, Vol.15 (11-12), p.2419-2425
Main Authors: Leinartas, K., Miečinskas, P., Selskis, A., Janušonienė, V., Galdikas, A., Ulbikas, J., Šetkus, A., Kaliasas, R., Juzeliunas, E.
Format: Article
Language:English
Subjects:
Analytical Chemistry
Characterization and Evaluation of Materials
Chemistry
Chemistry and Materials Science
Condensed Matter Physics
Electrochemistry
Energy Storage
Original Paper
Physical Chemistry
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Summary:Gold-capped silicon nanocolumns regularly distributed over silicon substrate were obtained. The columns length was roughly 100 nm; their deviation from perpendicular axis was less than 2°. The diameter of the columns was of the order of 10 nm or below of that. The proposed procedure of nanostructuring included the following main steps: deposition of aluminum thin layer (100–500 nm) by magnetron sputtering on (100) oriented Si wafers; formation of porous self-ordered alumina structures by electrochemical anodizing of the Al film in oxalic acid; electroless inversion of Au in alumina pores; and reactive ion etching. The obtained Si–Au structures are of importance as the platforms for biosensing applications, while the gold-free structures are of interest in photovoltaics.
ISSN:1432-8488
1433-0768
DOI:10.1007/s10008-011-1442-4