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1–8 GHz high efficiency single-stage travelling wave power amplifier
This paper describes a Class-A/AB wideband power amplifier that comprises of a single-stage transistor travelling wave structure in which capacitive coupling and frequency dependent lossy artificial-line are employed at the input of the active device. The proposed technique significantly enhances th...
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Published in: | Analog integrated circuits and signal processing 2013, Vol.74 (1), p.111-119 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | This paper describes a Class-A/AB wideband power amplifier that comprises of a single-stage transistor travelling wave structure in which capacitive coupling and frequency dependent lossy artificial-line are employed at the input of the active device. The proposed technique significantly enhances the amplifier’s gain-bandwidth product, input match and gain flatness performance. To ensure the amplifier delivers a predefined power to the load over its entire operating band 2-to-8 GHz a broadband load-pull technique was applied at the output of the amplifier. To avoid reduction in the amplifier’s bandwidth resulting from parasitic capacitive effects associated with the off-chip choke inductor a wideband RF choke was designed. The 1.31 × 2.93 mm
2
power amplifier was fabricated using 0.25 μm GaAs pHEMT MMIC process. The measurement results show that the proposed amplifier delivers an average
P
sat
of 29.5 dBm and
P
out
,
1 dB
of 26 dBm, and the corresponding PAE levels are 55 and 35 % for the
P
sat
and
P
out
,
1 dB
, respectively. |
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ISSN: | 0925-1030 1573-1979 |
DOI: | 10.1007/s10470-012-9863-2 |