A rigorous peeling algorithm for direct parameter extraction procedure of HBT small-signal equivalent circuit

A new direct parameter-extraction technique applied to the small-signal equivalent circuit of heterojunction bipolar transistor (HBT) is presented. The method is based on first determining the parasitic elements and then the intrinsic elements analytically. Concerning the intrinsic parameters, all t...

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Bibliographic Details
Published in:Analog integrated circuits and signal processing 2015-12, Vol.85 (3), p.405-411
Main Authors: Jincan, Zhang, Bo, Liu, Leiming, Zhang, Ligong, Sun, Jinchan, Wang, Lu, Song
Format: Article
Language:English
Subjects:
Circuits and Systems
Electrical Engineering
Engineering
Signal,Image and Speech Processing
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Summary:A new direct parameter-extraction technique applied to the small-signal equivalent circuit of heterojunction bipolar transistor (HBT) is presented. The method is based on first determining the parasitic elements and then the intrinsic elements analytically. Concerning the intrinsic parameters, all the elements are extracted using exact closed-form equations derived in terms of S -parameters by reducing the small-signal models to the simplified using peeling algorithm. The validity of the new extraction methodology is demonstrated by applying it to a 1 × 15 µm 2 InP HBT device within the frequency range of 0.1–40 GHz.
ISSN:0925-1030
1573-1979
DOI:10.1007/s10470-015-0586-z