Structural and optical characterization of indium-antimony complexes in ZnO

One of the main obstacles to the technical application of the wide-gap semiconductor ZnO represents the difficulty to achieve reliable p-type doping of ZnO with group V elements (N, P, As, Sb) acting as acceptors located on O lattice sites. The theoretically proposed concepts of cluster-doping or co...

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Bibliographic Details
Published in:Hyperfine interactions 2015-04, Vol.230 (1-3), p.65-71
Main Authors: Türker, M., Deicher, M., Johnston, K., Wolf, H., Wichert, Th
Format: Article
Language:English
Subjects:
Atomic
Condensed Matter Physics
Hadrons
Heavy Ions
Molecular
Nuclear Physics
Optical and Plasma Physics
Physics
Physics and Astronomy
Surfaces and Interfaces
Thin Films
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Summary:One of the main obstacles to the technical application of the wide-gap semiconductor ZnO represents the difficulty to achieve reliable p-type doping of ZnO with group V elements (N, P, As, Sb) acting as acceptors located on O lattice sites. The theoretically proposed concepts of cluster-doping or codoping may lead to an enhanced and stable p-type conductivity of ZnO. We report on PAC results obtained by codoping experiments of ZnO by ion implantation using the donor 111 In and the group-V acceptor Sb. The formation of In-Sb pairs has been observed. Based on these PAC results, there is no evidence for the formation of In-acceptor complexes involving more than one Sb acceptor. These results has been complemented by photoluminescence measurements.
ISSN:0304-3843
1572-9540
DOI:10.1007/s10751-014-1075-y