Design and Modelling of Silicon Quantum Dot Based Single Qubit Spin Quantum Gates

• Published in: International journal of theoretical physics 2022-11, Vol.61 (11), Article 258
• Main Authors: Bhat, Hilal A., Malik, Gul Faroz A., Khanday, Farooq A.
• Format: Article
• Language: English
• Subjects: Elementary Particles; Mathematical and Computational Physics; Physics; Physics and Astronomy; Quantum Field Theory; Quantum Physics; Theoretical
• ISSN: 1572-9575; 1572-9575
• DOI: 10.1007/s10773-022-05239-y

In the last two decades, a lot of research has been done for finding the best physical implementation of a quantum computer. Due to integrablity with classical computation hardware and versatility in creating qubits and quantum gates, silicon quantum dot-based systems are one of the most promising systems. In this paper, we have modelled a universal Clifford set of single qubit quantum gates based on silicon quantum dots framework by using the Lindblad master equation, where electron spin resonance (ESR) has been employed for manipulation of qubit states. State spin probability evolution of each of the gates has been reported in presence of dephasing effect. Moreover, the density matrix approach and quantum process tomography of each of the single qubit gates has been investigated. Furthermore, it has been shown that by increasing the ac magnetic field, we can obtain a high-fidelity NOT gate for a considerably wider range of static magnetic fields. This provides us with greater control by considering both ac magnetic field as well static magnetic field.