Calculation of spatial intensity distribution of InAsSb/InAsSbP laser diode emission

The spatial distribution of emission intensity in the active layer of a laser diode (LD) based on an InAsSb/InAsSbP heterostructure (generation wavelength λ gen ∼ 3.3 µm) is obtained for various stripe widths w by means of numerical solution of the wave equation in the 2D approximation taking into a...

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Bibliographic Details
Published in:Journal of applied spectroscopy 2008-11, Vol.75 (6), p.805-809
Main Authors: Burov, L. I., Gorbatsevich, A. S., Ryabtsev, A. G., Ryabtsev, G. I., Imenkov, A. N., Yakovlev, Yu. P.
Format: Article
Language:English
Subjects:
Analytical Chemistry
Atomic/Molecular Structure and Spectra
Physics
Physics and Astronomy
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Summary:The spatial distribution of emission intensity in the active layer of a laser diode (LD) based on an InAsSb/InAsSbP heterostructure (generation wavelength λ gen ∼ 3.3 µm) is obtained for various stripe widths w by means of numerical solution of the wave equation in the 2D approximation taking into account the refractive index nonlinearity. It has been shown that the special distribution of emission intensity becomes strongly inhomogeneous at w values exceeding 9–10 µm, which results in the appearance of additional maxima in the far-field pattern. Calculated far-field patterns in the active layer plane of the LD agree with corresponding experimental data.
ISSN:0021-9037
1573-8647
DOI:10.1007/s10812-009-9128-8