Loading…
Sintering behavior and microwave dielectric properties of TiO2 added Ba4(Sm0.5Nd0.5)28/3Ti18O54 ceramics with K2O–B2O3–SiO2 glass
K 2 O–B 2 O 3 –SiO 2 (KBS) synthesized via a solid-state reaction process was chosen as a novel sintering aid for Ba 6–3x (Sm 1-y , Nd y ) 8+2x Ti 18 O 54 + 2TiO 2 (x = 2/3 and y = 0.5; BSNTT) ceramics. Effects of KBS doping on sintering behavior, microstructure and microwave dielectric properties...
Saved in:
| Published in: | Journal of materials science. Materials in electronics 2016-03, Vol.27 (3), p.2783-2788 |
|---|---|
| Main Authors: | , , , , , |
| Format: | Article |
| Language: | English |
| Subjects: | |
| Citations: | Items that this one cites Items that cite this one |
| Online Access: | Get full text |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| cited_by | cdi_FETCH-LOGICAL-c2730-6134b6254df0f66b55b2b69564128bb9844612265aa2013d1f1c7a389dcea7413 |
|---|---|
| cites | cdi_FETCH-LOGICAL-c2730-6134b6254df0f66b55b2b69564128bb9844612265aa2013d1f1c7a389dcea7413 |
| container_end_page | 2788 |
| container_issue | 3 |
| container_start_page | 2783 |
| container_title | Journal of materials science. Materials in electronics |
| container_volume | 27 |
| creator | Zhou, Xiaohua Zhang, Yuqin Chang, Geng Yang, Xinshi Sun, Chengli Zhang, Shuren |
| description | K
2
O–B
2
O
3
–SiO
2
(KBS) synthesized via a solid-state reaction process was chosen as a novel sintering aid for Ba
6–3x
(Sm
1-y
, Nd
y
)
8+2x
Ti
18
O
54
+ 2TiO
2
(x = 2/3 and y = 0.5; BSNTT) ceramics. Effects of KBS doping on sintering behavior, microstructure and microwave dielectric properties of BSNTT ceramic were investigated. The appropriate KBS addition significantly lowered the sintering temperature of BSNTT ceramic with slightly damaging its microwave dielectric properties. The X-ray diffraction results showed that all the well sintered samples exhibited the main phase Ba(Sm,Nd)
2
Ti
4
O
12
and a certain amount of Ba
2
Ti
9
O
20
and TiO
2
secondary phases. Besides, the other secondary phase Sm
2
Ti
2
O
7
formed when 9 wt% KBS added. Then the scanning electron microscopy micrographs of the optimally well-sintered (1075 °C for 3 h) ceramics showed a dense microstructure. With the increasing content of KBS addition, both the dielectric constant (
ε
r
) and quality factor (
Q
×
f
) value decreased. At last, the good microwave dielectric properties of
ε
r
= 68.8,
Q
×
f
= 6766 GHz,
τ
f
= 28.76 ppm/°C were obtained for BSNTT + 5 wt% KBS ceramic sintered in air at 1075 °C for 3 h. |
| doi_str_mv | 10.1007/s10854-015-4090-0 |
| format | article |
| fullrecord | <record><control><sourceid>crossref_sprin</sourceid><recordid>TN_cdi_crossref_primary_10_1007_s10854_015_4090_0</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1007_s10854_015_4090_0</sourcerecordid><originalsourceid>FETCH-LOGICAL-c2730-6134b6254df0f66b55b2b69564128bb9844612265aa2013d1f1c7a389dcea7413</originalsourceid><addsrcrecordid>eNp9kL1OwzAUhS0EEqXwAGweYXB7_RtnpIg_UZGhRWKLnNhpXbVJZJdWbCw8AW_Ik5CozCz3TOfTuR9ClxRGFCAZRwpaCgJUEgEpEDhCAyoTToRmb8doAKlMiJCMnaKzGFcAoATXA_Q18_XWBV8vcOGWZuebgE1t8caXodmbncPWu7Urt8GXuA1N68LWu4ibCs99xrCx1lk8MeJqtoGRfLHduWZ6zOee6kwKXLpgOljEe79d4meW_Xx-T1jGu5j1gMXaxHiOTiqzju7iL4fo9f5ufvtIptnD0-3NlJQs4UAU5aJQTApbQaVUIWXBCpVKJSjTRZFqIRRlTEljGFBuaUXLxHCd2tKZRFA-RPTA7Z6LMbgqb4PfmPCRU8h7j_nBY955zHuPOXQddujEttfkQr5q3kPdzfyn9AsrhHQt</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Sintering behavior and microwave dielectric properties of TiO2 added Ba4(Sm0.5Nd0.5)28/3Ti18O54 ceramics with K2O–B2O3–SiO2 glass</title><source>Springer Link</source><creator>Zhou, Xiaohua ; Zhang, Yuqin ; Chang, Geng ; Yang, Xinshi ; Sun, Chengli ; Zhang, Shuren</creator><creatorcontrib>Zhou, Xiaohua ; Zhang, Yuqin ; Chang, Geng ; Yang, Xinshi ; Sun, Chengli ; Zhang, Shuren</creatorcontrib><description>K
2
O–B
2
O
3
–SiO
2
(KBS) synthesized via a solid-state reaction process was chosen as a novel sintering aid for Ba
6–3x
(Sm
1-y
, Nd
y
)
8+2x
Ti
18
O
54
+ 2TiO
2
(x = 2/3 and y = 0.5; BSNTT) ceramics. Effects of KBS doping on sintering behavior, microstructure and microwave dielectric properties of BSNTT ceramic were investigated. The appropriate KBS addition significantly lowered the sintering temperature of BSNTT ceramic with slightly damaging its microwave dielectric properties. The X-ray diffraction results showed that all the well sintered samples exhibited the main phase Ba(Sm,Nd)
2
Ti
4
O
12
and a certain amount of Ba
2
Ti
9
O
20
and TiO
2
secondary phases. Besides, the other secondary phase Sm
2
Ti
2
O
7
formed when 9 wt% KBS added. Then the scanning electron microscopy micrographs of the optimally well-sintered (1075 °C for 3 h) ceramics showed a dense microstructure. With the increasing content of KBS addition, both the dielectric constant (
ε
r
) and quality factor (
Q
×
f
) value decreased. At last, the good microwave dielectric properties of
ε
r
= 68.8,
Q
×
f
= 6766 GHz,
τ
f
= 28.76 ppm/°C were obtained for BSNTT + 5 wt% KBS ceramic sintered in air at 1075 °C for 3 h.</description><identifier>ISSN: 0957-4522</identifier><identifier>EISSN: 1573-482X</identifier><identifier>DOI: 10.1007/s10854-015-4090-0</identifier><language>eng</language><publisher>New York: Springer US</publisher><subject>Characterization and Evaluation of Materials ; Chemistry and Materials Science ; Materials Science ; Optical and Electronic Materials</subject><ispartof>Journal of materials science. Materials in electronics, 2016-03, Vol.27 (3), p.2783-2788</ispartof><rights>Springer Science+Business Media New York 2015</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c2730-6134b6254df0f66b55b2b69564128bb9844612265aa2013d1f1c7a389dcea7413</citedby><cites>FETCH-LOGICAL-c2730-6134b6254df0f66b55b2b69564128bb9844612265aa2013d1f1c7a389dcea7413</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Zhou, Xiaohua</creatorcontrib><creatorcontrib>Zhang, Yuqin</creatorcontrib><creatorcontrib>Chang, Geng</creatorcontrib><creatorcontrib>Yang, Xinshi</creatorcontrib><creatorcontrib>Sun, Chengli</creatorcontrib><creatorcontrib>Zhang, Shuren</creatorcontrib><title>Sintering behavior and microwave dielectric properties of TiO2 added Ba4(Sm0.5Nd0.5)28/3Ti18O54 ceramics with K2O–B2O3–SiO2 glass</title><title>Journal of materials science. Materials in electronics</title><addtitle>J Mater Sci: Mater Electron</addtitle><description>K
2
O–B
2
O
3
–SiO
2
(KBS) synthesized via a solid-state reaction process was chosen as a novel sintering aid for Ba
6–3x
(Sm
1-y
, Nd
y
)
8+2x
Ti
18
O
54
+ 2TiO
2
(x = 2/3 and y = 0.5; BSNTT) ceramics. Effects of KBS doping on sintering behavior, microstructure and microwave dielectric properties of BSNTT ceramic were investigated. The appropriate KBS addition significantly lowered the sintering temperature of BSNTT ceramic with slightly damaging its microwave dielectric properties. The X-ray diffraction results showed that all the well sintered samples exhibited the main phase Ba(Sm,Nd)
2
Ti
4
O
12
and a certain amount of Ba
2
Ti
9
O
20
and TiO
2
secondary phases. Besides, the other secondary phase Sm
2
Ti
2
O
7
formed when 9 wt% KBS added. Then the scanning electron microscopy micrographs of the optimally well-sintered (1075 °C for 3 h) ceramics showed a dense microstructure. With the increasing content of KBS addition, both the dielectric constant (
ε
r
) and quality factor (
Q
×
f
) value decreased. At last, the good microwave dielectric properties of
ε
r
= 68.8,
Q
×
f
= 6766 GHz,
τ
f
= 28.76 ppm/°C were obtained for BSNTT + 5 wt% KBS ceramic sintered in air at 1075 °C for 3 h.</description><subject>Characterization and Evaluation of Materials</subject><subject>Chemistry and Materials Science</subject><subject>Materials Science</subject><subject>Optical and Electronic Materials</subject><issn>0957-4522</issn><issn>1573-482X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2016</creationdate><recordtype>article</recordtype><recordid>eNp9kL1OwzAUhS0EEqXwAGweYXB7_RtnpIg_UZGhRWKLnNhpXbVJZJdWbCw8AW_Ik5CozCz3TOfTuR9ClxRGFCAZRwpaCgJUEgEpEDhCAyoTToRmb8doAKlMiJCMnaKzGFcAoATXA_Q18_XWBV8vcOGWZuebgE1t8caXodmbncPWu7Urt8GXuA1N68LWu4ibCs99xrCx1lk8MeJqtoGRfLHduWZ6zOee6kwKXLpgOljEe79d4meW_Xx-T1jGu5j1gMXaxHiOTiqzju7iL4fo9f5ufvtIptnD0-3NlJQs4UAU5aJQTApbQaVUIWXBCpVKJSjTRZFqIRRlTEljGFBuaUXLxHCd2tKZRFA-RPTA7Z6LMbgqb4PfmPCRU8h7j_nBY955zHuPOXQddujEttfkQr5q3kPdzfyn9AsrhHQt</recordid><startdate>20160301</startdate><enddate>20160301</enddate><creator>Zhou, Xiaohua</creator><creator>Zhang, Yuqin</creator><creator>Chang, Geng</creator><creator>Yang, Xinshi</creator><creator>Sun, Chengli</creator><creator>Zhang, Shuren</creator><general>Springer US</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20160301</creationdate><title>Sintering behavior and microwave dielectric properties of TiO2 added Ba4(Sm0.5Nd0.5)28/3Ti18O54 ceramics with K2O–B2O3–SiO2 glass</title><author>Zhou, Xiaohua ; Zhang, Yuqin ; Chang, Geng ; Yang, Xinshi ; Sun, Chengli ; Zhang, Shuren</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c2730-6134b6254df0f66b55b2b69564128bb9844612265aa2013d1f1c7a389dcea7413</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2016</creationdate><topic>Characterization and Evaluation of Materials</topic><topic>Chemistry and Materials Science</topic><topic>Materials Science</topic><topic>Optical and Electronic Materials</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Zhou, Xiaohua</creatorcontrib><creatorcontrib>Zhang, Yuqin</creatorcontrib><creatorcontrib>Chang, Geng</creatorcontrib><creatorcontrib>Yang, Xinshi</creatorcontrib><creatorcontrib>Sun, Chengli</creatorcontrib><creatorcontrib>Zhang, Shuren</creatorcontrib><collection>CrossRef</collection><jtitle>Journal of materials science. Materials in electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Zhou, Xiaohua</au><au>Zhang, Yuqin</au><au>Chang, Geng</au><au>Yang, Xinshi</au><au>Sun, Chengli</au><au>Zhang, Shuren</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Sintering behavior and microwave dielectric properties of TiO2 added Ba4(Sm0.5Nd0.5)28/3Ti18O54 ceramics with K2O–B2O3–SiO2 glass</atitle><jtitle>Journal of materials science. Materials in electronics</jtitle><stitle>J Mater Sci: Mater Electron</stitle><date>2016-03-01</date><risdate>2016</risdate><volume>27</volume><issue>3</issue><spage>2783</spage><epage>2788</epage><pages>2783-2788</pages><issn>0957-4522</issn><eissn>1573-482X</eissn><abstract>K
2
O–B
2
O
3
–SiO
2
(KBS) synthesized via a solid-state reaction process was chosen as a novel sintering aid for Ba
6–3x
(Sm
1-y
, Nd
y
)
8+2x
Ti
18
O
54
+ 2TiO
2
(x = 2/3 and y = 0.5; BSNTT) ceramics. Effects of KBS doping on sintering behavior, microstructure and microwave dielectric properties of BSNTT ceramic were investigated. The appropriate KBS addition significantly lowered the sintering temperature of BSNTT ceramic with slightly damaging its microwave dielectric properties. The X-ray diffraction results showed that all the well sintered samples exhibited the main phase Ba(Sm,Nd)
2
Ti
4
O
12
and a certain amount of Ba
2
Ti
9
O
20
and TiO
2
secondary phases. Besides, the other secondary phase Sm
2
Ti
2
O
7
formed when 9 wt% KBS added. Then the scanning electron microscopy micrographs of the optimally well-sintered (1075 °C for 3 h) ceramics showed a dense microstructure. With the increasing content of KBS addition, both the dielectric constant (
ε
r
) and quality factor (
Q
×
f
) value decreased. At last, the good microwave dielectric properties of
ε
r
= 68.8,
Q
×
f
= 6766 GHz,
τ
f
= 28.76 ppm/°C were obtained for BSNTT + 5 wt% KBS ceramic sintered in air at 1075 °C for 3 h.</abstract><cop>New York</cop><pub>Springer US</pub><doi>10.1007/s10854-015-4090-0</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext |
| identifier | ISSN: 0957-4522 |
| ispartof | Journal of materials science. Materials in electronics, 2016-03, Vol.27 (3), p.2783-2788 |
| issn | 0957-4522 1573-482X |
| language | eng |
| recordid | cdi_crossref_primary_10_1007_s10854_015_4090_0 |
| source | Springer Link |
| subjects | Characterization and Evaluation of Materials Chemistry and Materials Science Materials Science Optical and Electronic Materials |
| title | Sintering behavior and microwave dielectric properties of TiO2 added Ba4(Sm0.5Nd0.5)28/3Ti18O54 ceramics with K2O–B2O3–SiO2 glass |
| url | http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T16%3A08%3A20IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref_sprin&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Sintering%20behavior%20and%20microwave%20dielectric%20properties%20of%20TiO2%20added%20Ba4(Sm0.5Nd0.5)28/3Ti18O54%20ceramics%20with%20K2O%E2%80%93B2O3%E2%80%93SiO2%20glass&rft.jtitle=Journal%20of%20materials%20science.%20Materials%20in%20electronics&rft.au=Zhou,%20Xiaohua&rft.date=2016-03-01&rft.volume=27&rft.issue=3&rft.spage=2783&rft.epage=2788&rft.pages=2783-2788&rft.issn=0957-4522&rft.eissn=1573-482X&rft_id=info:doi/10.1007/s10854-015-4090-0&rft_dat=%3Ccrossref_sprin%3E10_1007_s10854_015_4090_0%3C/crossref_sprin%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c2730-6134b6254df0f66b55b2b69564128bb9844612265aa2013d1f1c7a389dcea7413%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |