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Electrochemical properties of δ- and γ-MnO2 thin films deposited by a chemical bath technique

In this study, γ- and δ-MnO 2 thin films were deposited onto F-doped tin oxide glass substrates via a chemical bath deposition technique in which manganese (II) ions were oxidized by bromate ion in a homogeneous solution. The addition of cetyltrimethylammonium chlorate to the starting solutions resu...

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Bibliographic Details
Published in:Journal of materials science. Materials in electronics 2016-08, Vol.27 (8), p.8001-8005
Main Authors: Kondo, Terukazu, Matsushima, Yuta, Matsuda, Keigo, Unuma, Hidero
Format: Article
Language:English
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Summary:In this study, γ- and δ-MnO 2 thin films were deposited onto F-doped tin oxide glass substrates via a chemical bath deposition technique in which manganese (II) ions were oxidized by bromate ion in a homogeneous solution. The addition of cetyltrimethylammonium chlorate to the starting solutions resulted in the deposition of the δ-phase. The thin films showed rectangular cyclic voltammograms even at higher scan rates. The δ-phase films showed better specific capacitance than the γ-phase films. A 200-nm-thick δ-MnO 2 film showed an excellent specific capacitance of 750 F/g at a scan rate of 10 mV/s.
ISSN:0957-4522
1573-482X
DOI:10.1007/s10854-016-4795-8