The Influence of Oxygen/Argon Ratio on the Structure and Surface Morphology of GaBa2Cu3O7−δ Films Deposited by RF Magnetic Sputtering

• Published in: Journal of superconductivity and novel magnetism 2012-08, Vol.25 (6), p.1641-1645
• Main Authors: Zhu, Peng, Liu, Linfei, Zhu, Shengping, Xiao, Guina, Wang, Ying, Xu, Da, Li, Yijie
• Format: Article
• Language: English
• Subjects: Characterization and Evaluation of Materials; Condensed Matter Physics; Condensed matter: structure, mechanical and thermal properties; Cross-disciplinary physics: materials science; rheology; Deposition by sputtering; Exact sciences and technology; Laser deposition; Magnetic Materials; Magnetism; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Original Paper; Physics; Physics and Astronomy; Strongly Correlated Systems; Structure and morphology; thickness; Superconductivity; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology
• ISSN: 1557-1939; 1557-1947
• DOI: 10.1007/s10948-012-1494-4

thin films have been grown on CeO 2 cap layer by RF magnetic sputtering with different oxygen/argon partial pressure ratio from 2:1 to 1:5. The CeO 2 cap layers were fabricated by pulse laser deposition (PLD) on YSZ/CeO 2 /Ni-5%W alloy substrate and had good properties in structure and surface morphology. We study the relationship between oxygen/argon ratio and the performance of the film in order to find out the optimized deposition condition. The structure and surface morphology of the thin films were measured by X-ray diffraction (XRD), Field emission scanning electron microscope (FE-SEM), Atomic force microscopy (AFM). It was found that the texture and surface performance of film, such as growth orientation, grain roughness, grain size and surface morphology, are deeply affected by the oxygen/argon ratio. And the film’s performance was the best when the oxygen/argon partial pressure ratio is 1:1.