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Erratum to: Simulation of InGaN/GaN light-emitting diodes with patterned sapphire substrate

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Published in:Optical and quantum electronics 2015-02, Vol.47 (2), p.463-463
Main Authors: Xia, Chang Sheng, Li, Z. M. Simon, Sheng, Yang, Cheng, Li Wen
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Language:English
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container_issue 2
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container_title Optical and quantum electronics
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creator Xia, Chang Sheng
Li, Z. M. Simon
Sheng, Yang
Cheng, Li Wen
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doi_str_mv 10.1007/s11082-014-0041-x
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fullrecord <record><control><sourceid>crossref_sprin</sourceid><recordid>TN_cdi_crossref_primary_10_1007_s11082_014_0041_x</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>10_1007_s11082_014_0041_x</sourcerecordid><originalsourceid>FETCH-LOGICAL-c198x-47cfc429dec4f532df06513017cc2e16052d26fb4f1de09ee36971842af4c173</originalsourceid><addsrcrecordid>eNp9kMtKQzEURYMoWKsf4Cw_EHtObu7LmZRaC0UHdiA4CGkebUrvgyQX6997pY4dHPbkrM1mEXKP8IAA5SwiQsUZoGAAAtnpgkwwLzmrsPy4JBPIoGBVjfU1uYnxAACFyGFCPhchqDQ0NHWP9N03w1El37W0c3TVLtXrbDx69Lt9YrbxKfl2R43vjI30y6c97VVKNrTW0Kj6fu-DpXHYxjSW2lty5dQx2ru_nJLN82Izf2Hrt-Vq_rRmGuvqxESpnRa8NlYLl2fcOChyzABLrbnFAnJueOG2wqGxUFubFXWJleDKCY1lNiV4rtWhizFYJ_vgGxW-JYL8lSPPcuQoR_7KkaeR4Wcmjr_tzgZ56IbQjiv_gX4A4qRo8g</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Erratum to: Simulation of InGaN/GaN light-emitting diodes with patterned sapphire substrate</title><source>Springer Link</source><creator>Xia, Chang Sheng ; Li, Z. M. Simon ; Sheng, Yang ; Cheng, Li Wen</creator><creatorcontrib>Xia, Chang Sheng ; Li, Z. M. Simon ; Sheng, Yang ; Cheng, Li Wen</creatorcontrib><identifier>ISSN: 0306-8919</identifier><identifier>EISSN: 1572-817X</identifier><identifier>DOI: 10.1007/s11082-014-0041-x</identifier><language>eng</language><publisher>Boston: Springer US</publisher><subject>Characterization and Evaluation of Materials ; Computer Communication Networks ; Electrical Engineering ; Erratum ; Lasers ; Optical Devices ; Optics ; Photonics ; Physics ; Physics and Astronomy</subject><ispartof>Optical and quantum electronics, 2015-02, Vol.47 (2), p.463-463</ispartof><rights>Springer Science+Business Media New York 2014</rights><lds50>peer_reviewed</lds50><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><link.rule.ids>314,780,784,27924,27925</link.rule.ids></links><search><creatorcontrib>Xia, Chang Sheng</creatorcontrib><creatorcontrib>Li, Z. M. Simon</creatorcontrib><creatorcontrib>Sheng, Yang</creatorcontrib><creatorcontrib>Cheng, Li Wen</creatorcontrib><title>Erratum to: Simulation of InGaN/GaN light-emitting diodes with patterned sapphire substrate</title><title>Optical and quantum electronics</title><addtitle>Opt Quant Electron</addtitle><subject>Characterization and Evaluation of Materials</subject><subject>Computer Communication Networks</subject><subject>Electrical Engineering</subject><subject>Erratum</subject><subject>Lasers</subject><subject>Optical Devices</subject><subject>Optics</subject><subject>Photonics</subject><subject>Physics</subject><subject>Physics and Astronomy</subject><issn>0306-8919</issn><issn>1572-817X</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2015</creationdate><recordtype>article</recordtype><recordid>eNp9kMtKQzEURYMoWKsf4Cw_EHtObu7LmZRaC0UHdiA4CGkebUrvgyQX6997pY4dHPbkrM1mEXKP8IAA5SwiQsUZoGAAAtnpgkwwLzmrsPy4JBPIoGBVjfU1uYnxAACFyGFCPhchqDQ0NHWP9N03w1El37W0c3TVLtXrbDx69Lt9YrbxKfl2R43vjI30y6c97VVKNrTW0Kj6fu-DpXHYxjSW2lty5dQx2ru_nJLN82Izf2Hrt-Vq_rRmGuvqxESpnRa8NlYLl2fcOChyzABLrbnFAnJueOG2wqGxUFubFXWJleDKCY1lNiV4rtWhizFYJ_vgGxW-JYL8lSPPcuQoR_7KkaeR4Wcmjr_tzgZ56IbQjiv_gX4A4qRo8g</recordid><startdate>201502</startdate><enddate>201502</enddate><creator>Xia, Chang Sheng</creator><creator>Li, Z. M. Simon</creator><creator>Sheng, Yang</creator><creator>Cheng, Li Wen</creator><general>Springer US</general><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>201502</creationdate><title>Erratum to: Simulation of InGaN/GaN light-emitting diodes with patterned sapphire substrate</title><author>Xia, Chang Sheng ; Li, Z. M. Simon ; Sheng, Yang ; Cheng, Li Wen</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c198x-47cfc429dec4f532df06513017cc2e16052d26fb4f1de09ee36971842af4c173</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2015</creationdate><topic>Characterization and Evaluation of Materials</topic><topic>Computer Communication Networks</topic><topic>Electrical Engineering</topic><topic>Erratum</topic><topic>Lasers</topic><topic>Optical Devices</topic><topic>Optics</topic><topic>Photonics</topic><topic>Physics</topic><topic>Physics and Astronomy</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Xia, Chang Sheng</creatorcontrib><creatorcontrib>Li, Z. M. Simon</creatorcontrib><creatorcontrib>Sheng, Yang</creatorcontrib><creatorcontrib>Cheng, Li Wen</creatorcontrib><collection>CrossRef</collection><jtitle>Optical and quantum electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Xia, Chang Sheng</au><au>Li, Z. M. Simon</au><au>Sheng, Yang</au><au>Cheng, Li Wen</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Erratum to: Simulation of InGaN/GaN light-emitting diodes with patterned sapphire substrate</atitle><jtitle>Optical and quantum electronics</jtitle><stitle>Opt Quant Electron</stitle><date>2015-02</date><risdate>2015</risdate><volume>47</volume><issue>2</issue><spage>463</spage><epage>463</epage><pages>463-463</pages><issn>0306-8919</issn><eissn>1572-817X</eissn><cop>Boston</cop><pub>Springer US</pub><doi>10.1007/s11082-014-0041-x</doi><tpages>1</tpages><oa>free_for_read</oa></addata></record>
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subjects Characterization and Evaluation of Materials
Computer Communication Networks
Electrical Engineering
Erratum
Lasers
Optical Devices
Optics
Photonics
Physics
Physics and Astronomy
title Erratum to: Simulation of InGaN/GaN light-emitting diodes with patterned sapphire substrate
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-28T21%3A35%3A52IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref_sprin&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Erratum%20to:%20Simulation%20of%20InGaN/GaN%20light-emitting%20diodes%20with%20patterned%20sapphire%20substrate&rft.jtitle=Optical%20and%20quantum%20electronics&rft.au=Xia,%20Chang%20Sheng&rft.date=2015-02&rft.volume=47&rft.issue=2&rft.spage=463&rft.epage=463&rft.pages=463-463&rft.issn=0306-8919&rft.eissn=1572-817X&rft_id=info:doi/10.1007/s11082-014-0041-x&rft_dat=%3Ccrossref_sprin%3E10_1007_s11082_014_0041_x%3C/crossref_sprin%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c198x-47cfc429dec4f532df06513017cc2e16052d26fb4f1de09ee36971842af4c173%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true