Analysis of junction temperatures in high-power GaN-based LEDs

• Published in: Science China Technological Sciences 2010-02, Vol.53 (2), p.297-300
• Main Authors: Jiang, YuXuan, Li, Zheng, Sun, YongJian, Yu, TongJun, Chen, ZhiZhong, Zhang, GuoYi, Zhang, GuangChen, Feng, ShiWei
• Format: Article
• Language: English
• Subjects: Engineering
• ISSN: 1674-7321; 1862-281X; 1869-1900
• DOI: 10.1007/s11431-010-0040-5

We presented the analysis of the incomplete conduction in bonding medium in high power GaN-based light-emitting diode (LED) packages. A numerical study was carried out with parametric model to understand the junction temperature variation due to bonding medium defects. Transient thermal measurement was performed to evaluate LED’s junction temperature. Thermal resistance from chip to lead frame was 20 K/W in our sample LED. It was suggested that only 60% of the surface area of the bonding medium was involved in the thermal conduction. This result was also supported by the SEM image. Blocking of thermal path induced by ineffective area of the bonding medium was regarded as a factor of its thermal resistance. Thus, the effective area of the bonding medium should be included in the FEM model and considered as another important factor in high power LED’s thermal management.