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Determination of capacitance-voltage characteristics of organic semiconductor devices by combined current-voltage and voltage decay measurements

We present in this paper a new method,based on measurements of conventional direct current-voltage(I-V) characteristics and transient voltage-time(V-t) characteristics during the discharge process,for determining capacitance-voltage(C-V) characteris-tics of organic semiconductor devices.Derivatives...

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Bibliographic Details
Published in:Science China Technological Sciences 2011-04, Vol.54 (4), p.826-829
Main Authors: Li, Nuo, Gao, XinDong, Ding, BaoFu, Sun, XiaoYu, Ding, XunMin, Hou, XiaoYuan
Format: Article
Language:English
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Summary:We present in this paper a new method,based on measurements of conventional direct current-voltage(I-V) characteristics and transient voltage-time(V-t) characteristics during the discharge process,for determining capacitance-voltage(C-V) characteris-tics of organic semiconductor devices.Derivatives of I-V and V-t,dI/dV and dV/dt,are related with C by a simple formula C=-V(dI/dV)/(dV/dt)The validity of the method is confirmed by experimental data measured from a set of single-organic-layer devices with different layer thicknesses.
ISSN:1674-7321
1869-1900
1862-281X
DOI:10.1007/s11431-010-4270-3