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Determination of capacitance-voltage characteristics of organic semiconductor devices by combined current-voltage and voltage decay measurements
We present in this paper a new method,based on measurements of conventional direct current-voltage(I-V) characteristics and transient voltage-time(V-t) characteristics during the discharge process,for determining capacitance-voltage(C-V) characteris-tics of organic semiconductor devices.Derivatives...
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Published in: | Science China Technological Sciences 2011-04, Vol.54 (4), p.826-829 |
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container_title | Science China Technological Sciences |
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creator | Li, Nuo Gao, XinDong Ding, BaoFu Sun, XiaoYu Ding, XunMin Hou, XiaoYuan |
description | We present in this paper a new method,based on measurements of conventional direct current-voltage(I-V) characteristics and transient voltage-time(V-t) characteristics during the discharge process,for determining capacitance-voltage(C-V) characteris-tics of organic semiconductor devices.Derivatives of I-V and V-t,dI/dV and dV/dt,are related with C by a simple formula C=-V(dI/dV)/(dV/dt)The validity of the method is confirmed by experimental data measured from a set of single-organic-layer devices with different layer thicknesses. |
doi_str_mv | 10.1007/s11431-010-4270-3 |
format | article |
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China Technol. Sci</stitle><addtitle>SCIENCE CHINA Technological Sciences</addtitle><date>2011-04-01</date><risdate>2011</risdate><volume>54</volume><issue>4</issue><spage>826</spage><epage>829</epage><pages>826-829</pages><issn>1674-7321</issn><eissn>1869-1900</eissn><eissn>1862-281X</eissn><abstract>We present in this paper a new method,based on measurements of conventional direct current-voltage(I-V) characteristics and transient voltage-time(V-t) characteristics during the discharge process,for determining capacitance-voltage(C-V) characteris-tics of organic semiconductor devices.Derivatives of I-V and V-t,dI/dV and dV/dt,are related with C by a simple formula C=-V(dI/dV)/(dV/dt)The validity of the method is confirmed by experimental data measured from a set of single-organic-layer devices with different layer thicknesses.</abstract><cop>Heidelberg</cop><pub>SP Science China Press</pub><doi>10.1007/s11431-010-4270-3</doi><tpages>4</tpages></addata></record> |
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subjects | Engineering 半导体器件 有机半导体 测量设备 电压特性 电容电压 电流电压 衰减测量 |
title | Determination of capacitance-voltage characteristics of organic semiconductor devices by combined current-voltage and voltage decay measurements |
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