Design of terahertz band-stop filter based on a metallic resonator on high-resistivity silicon wafer

• Published in: Science China. Technological sciences 2013-09, Vol.56 (9), p.2238-2242
• Main Authors: Zhang, JinLing, Zhang, Yu, Gao, Ke, Du, YuLei, Zhang, Nan, Lu, YingHua
• Format: Article
• Language: English
• Subjects: Engineering; Progress of Projects Supported by NSFC; 太赫兹时域光谱; 太赫兹波; 带阻滤波器; 硅晶片; 设计; 谐振器; 金属; 高电阻率
• ISSN: 1674-7321; 1869-1900
• DOI: 10.1007/s11431-013-5289-z

In this paper, we present a terahertz （THz） band-stop filter realized by fabricating a metallic T-shaped resonator pattern on the high-resistivity silicon wafer. The filter exhibits two typical band-stop response characteristics depending on the incident di- rection of electric field with respect to the T-shaped resonator. When the long and the short arms of the T-shaped resonator were electrically polarized by changing the incident THz wave transmission directions, the corresponding central frequencies of the band-stop filter were found to be 0.436 THz at -42dB and 0.610 THz at -28 dB, respectively. Using three-dimensional （3D） finite-integral time-domain simulations, the band-stop filter was designed, which can operate in the wavelength between 0.2 and 0.8 THz. Experimental verification was also performed using a free space THz time-domain spectroscopy system. The band-stop response characteristics are in good agreement with the simulation results. The interesting THz band-stop filtering properties suggest a promising application in the modern THz communication systems, THz time-domain spectroscopic imag- ing and THz continuous wave imaging.