Interface dipole engineering in metal gate/high-k stacks

Although metal gate/high-k stacks are commonly used in metal-oxide-semiconductor field-effect-transistors （MOSFETs） in the 45 nm technology node and beyond, there are still many challenges to be solved. Among the various technologies to tackle these problems, interface dipole engineering （IDE） is an...

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Bibliographic Details
Published in:Chinese science bulletin 2012, Vol.57 (22), p.2872-2878
Main Authors: Huang, AnPing, Zheng, XiaoHu, Xiao, ZhiSong, Wang, Mei, Di, ZengFeng, Chu, Paul K
Format: Article
Language:English
Subjects:
Chemistry/Food Science
Earth Sciences
electric field
Engineering
Humanities and Social Sciences
IDE接口
Life Sciences
metals
MOSFET
multidisciplinary
oxides
Physics
Review
Science
Science (multidisciplinary)
semiconductors
偶极子
半导体场效应晶体管
堆叠
工程
技术节点
金属栅
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Summary:Although metal gate/high-k stacks are commonly used in metal-oxide-semiconductor field-effect-transistors （MOSFETs） in the 45 nm technology node and beyond, there are still many challenges to be solved. Among the various technologies to tackle these problems, interface dipole engineering （IDE） is an effective method to improve the performance, particularly, modulating the effective work function （EWF） of metal gates. Because of the different electronegativity of the various atoms in the interfacial layer, a dipole layer with an electric filed can be formed altering the band alignment in the MOS stack. This paper reviews the interface dipole formation induced by different elements, recent progresses in metal gate/high-k MOS stacks with IDE on EWF modulation, and mechanism of IDE.
ISSN:1001-6538
1861-9541
DOI:10.1007/s11434-012-5289-6