Point defect diagrams for pure and doped cobalt oxide in the temperature range of 1,173–1,673 K (I)

The point defect diagram in non-stoichiometric cobalt oxide , pure and doped with M 3+ and M + metal ions, taking into consideration all of the types of defects in the cation sublattice are presented in this work. A new method was used for the calculations of the diagrams. This method is based on th...

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Bibliographic Details
Published in:Ionics 2011-05, Vol.17 (4), p.367-382
Main Author: Stokłosa, Andrzej
Format: Article
Language:English
Subjects:
Chemistry
Chemistry and Materials Science
Condensed Matter Physics
Electrochemistry
Energy Storage
Optical and Electronic Materials
Original Paper
Renewable and Green Energy
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Summary:The point defect diagram in non-stoichiometric cobalt oxide , pure and doped with M 3+ and M + metal ions, taking into consideration all of the types of defects in the cation sublattice are presented in this work. A new method was used for the calculations of the diagrams. This method is based on the derived relations between the standard Gibbs energies of formation of cobalt vacancies and the intrinsic ionic and electronic defects; it also uses the experimental values of the deviation from the stoichiometry. The calculations were performed using the results of studies obtained by many authors in the temperature range of 1,173–1,673 K.
ISSN:0947-7047
1862-0760
DOI:10.1007/s11581-011-0532-8