Fast Preparation and Low-Temperature Thermoelectric Properties of CoSb3

• Published in: Journal of electronic materials 2013, Vol.42 (1), p.109-113
• Main Authors: Su, Taichao, He, Chunyuan, Li, Hongtao, Guo, Xin, Li, Shangsheng, Ma, Hongan, Jia, Xiaopeng
• Format: Article
• Language: English
• Subjects: Characterization and Evaluation of Materials; Chemistry and Materials Science; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Condensed matter: structure, mechanical and thermal properties; Electrical properties of specific thin films; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport phenomena in thin films and low-dimensional structures; Electronics and Microelectronics; Exact sciences and technology; Instrumentation; Materials Science; Optical and Electronic Materials; Physical properties of thin films, nonelectronic; Physics; Solid State Physics; Structure and morphology; thickness; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thermal stability; thermal effects; Thermoelectric effects; Thin film structure and morphology
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-012-2259-3

Polycrystalline p -type CoSb 3 was synthesized by the high-pressure method. The microstructure and temperature-dependent thermoelectric properties of CoSb 3 were investigated. X-ray diffraction and scanning electron microscopy showed that single-phase CoSb 3 with fine grain size could be quickly synthesized under high pressure. The carrier concentrations of CoSb 3 could be tuned by more than a factor of 10 by changing the pressure during synthesis. With the increase of the synthetic pressure, the Seebeck coefficient and resistivity of CoSb 3 increase while the thermal conductivity decreases.