Origin of Room Temperature Ferromagnetism in Cr-Doped Lead-Free Ferroelectric Bi0.5Na0.5TiO3 Materials

The development of multiferroic materials based on lead-free ferroelectric material provides an opportunity to fabricate next-generation electronic devices. In this work, Cr-doped lead-free ferroelectric Bi 0.5 Na 0.5 TiO 3 materials were synthesized by using the sol–gel method. The optical band gap...

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Bibliographic Details
Published in:Journal of electronic materials 2017-06, Vol.46 (6), p.3367-3372
Main Authors: Thanh, L. T. H., Doan, N. B., Dung, N. Q., Cuong, L. V., Bac, L. H., Duc, N. A., Bao, P. Q., Dung, D. D.
Format: Article
Language:English
Subjects:
Characterization and Evaluation of Materials
Chemistry and Materials Science
Electronics and Microelectronics
Instrumentation
Materials Science
Optical and Electronic Materials
Solid State Physics
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Summary:The development of multiferroic materials based on lead-free ferroelectric material provides an opportunity to fabricate next-generation electronic devices. In this work, Cr-doped lead-free ferroelectric Bi 0.5 Na 0.5 TiO 3 materials were synthesized by using the sol–gel method. The optical band gap was reduced from 3.12 eV to 2.12 eV for undoped and 9 mol.% Cr-doped Bi 0.5 Na 0.5 TiO 3 with the substitution of Cr at the Ti-site. Cr-doped Bi 0.5 Na 0.5 TiO 3 materials exhibited weak ferromagnetism at room temperature. Saturation magnetization was approximately 0.08  μ B /Cr at 5 K. Our work will facilitate the further understanding of the role of transition metal ferromagnetism in lead-free ferroelectric materials at room temperature.
ISSN:0361-5235
1543-186X
DOI:10.1007/s11664-016-5248-0