Microwave Dielectric Properties of BiCu2PO6 Ceramics with Low Sintering Temperature

• Published in: Journal of electronic materials 2017-11, Vol.46 (11), p.6241-6245
• Main Authors: Hao, Shu-Zhao, Zhou, Di, Li, Wen-Bo, Pang, Li-Xia
• Format: Article
• Language: English
• Subjects: Characterization and Evaluation of Materials; Chemistry and Materials Science; Electronics and Microelectronics; Instrumentation; Materials Science; Optical and Electronic Materials; Solid State Physics
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-017-5658-7

A BiCu 2 PO 6 microwave dielectric ceramic was prepared using a solid-state reaction method. As the sintering temperature increased from 800°C to 880°C, the bulk density of BiCu 2 PO 6 ceramic increased from 6.299 g/cm 3 to 6.366 g/cm 3 ; the optimal temperature was 860°C. The best microwave dielectric properties [permittivity ( ɛ r ) = ∼16, a quality factor ( Q  ×  f ) = ∼39,110 GHz and a temperature coefficient of resonant frequency ( τ f ) = ∼−59 ppm/°C] were obtained in the ceramic sintered at 860°C for 2 h. Then, TiO 2 with a positive τ f (∼+400 ppm/°C) was added to compensate the τ f value. The composite material was found to have a near-zero τ f (+2.7 ppm/°C) and desirable microwave properties ( ɛ r  = 19.9, Q  ×  f  = 24,885 GHz) when synthesized at a sintering temperature of 880°C. This system could potentially be used for low-temperature co-fired ceramics technology applications.