Properties of Iodine-Doped CdTe Layers on (211) Si Grown at High Substrate Temperatures by MOVPE

• Published in: Journal of electronic materials 2020-11, Vol.49 (11), p.6996-6999
• Main Authors: Niraula, M., Yasuda, K., Torii, R., Higashira, Y., Tamura, R., Chaudhari, B. S., Kobayashi, T., Goto, H., Fujii, S., Agata, Y.
• Format: Article
• Language: English
• Subjects: Characterization and Evaluation of Materials; Chemistry and Materials Science; Electronics and Microelectronics; Instrumentation; Materials Science; Optical and Electronic Materials; Solid State Physics; Topical Collection: U.S. Workshop on Physics and Chemistry of II-VI Materials 2019; U.S. Workshop on Physics and Chemistry of II-VI Materials 2019
• ISSN: 0361-5235; 1543-186X
• DOI: 10.1007/s11664-020-08420-3

The properties of iodine-doped (211) CdTe layers grown on (211) Si substrates by metalorganic vapor-phase epitaxy at high substrate temperatures from 325°C to 450°C were studied. The growth rate of the doped layer increased with increasing substrate temperature before reaching a maximum value of 2.6 μ m/h at 425°C, after which it decreased slightly. On the other hand, the room-temperature electron density showed a strong dependence on the Te/Cd precursor flow-rate ratios, where the electron density increased with a decreasing Te/Cd ratio. The highest electron density of 2.5×10 18 cm −3 was obtained by growing the epilayer at a substrate temperature of 400°C and Te/Cd ratio of 0.05. This was considered to be due to decreased donor compensation at a small Te/Cd ratio. Good correspondence was observed between the results obtained from Hall measurements and photoluminescence measurements.