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MBE P-on-n Hg1−xCdxTe heterostructure detectors on silicon substrates
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Published in: | Journal of electronic materials 1998-06, Vol.27 (6), p.546-549 |
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Main Authors: | , , , , , , , , , , , |
Format: | Article |
Language: | English |
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cited_by | cdi_FETCH-LOGICAL-c243t-922213617a9f943985fc9c2ae59cf7166de268a247c2ae932fb2b374e49a541f3 |
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cites | cdi_FETCH-LOGICAL-c243t-922213617a9f943985fc9c2ae59cf7166de268a247c2ae932fb2b374e49a541f3 |
container_end_page | 549 |
container_issue | 6 |
container_start_page | 546 |
container_title | Journal of electronic materials |
container_volume | 27 |
creator | Wijewarnsuriya, P. S. Zandian, M. Edwall, D. D. McLevige, W. V. Chen, C. A. Pasko, J. G. Hildebrandt, G. Chen, A. C. Arias, J. M. D’Souza, A. I. Rujirawat, S. Sivananthan, S. |
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doi_str_mv | 10.1007/s11664-998-0013-7 |
format | article |
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ispartof | Journal of electronic materials, 1998-06, Vol.27 (6), p.546-549 |
issn | 0361-5235 1543-186X |
language | eng |
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source | Springer Nature |
title | MBE P-on-n Hg1−xCdxTe heterostructure detectors on silicon substrates |
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