C-cut Nd-doped vanadate crystal self-Raman laser with narrow Q-switched envelope and high mode-locked repetition rate

In this paper, a passively Q-switched and mode-locked c-cut Nd-doped vanadate crystal self-Raman laser at 1.17 μm is firstly demonstrated by using Cr^4＋：YAG. Two crystals of Nd^3＋：YVO4 and Nd^3＋：Gd VO4 are adopted to generate laser, respectively. With the incident pump power of 13 W, the average out...

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Bibliographic Details
Published in:Optoelectronics letters 2014-11, Vol.10 (6), p.423-426
Main Author: 李祚涵 彭继迎 郑义 杨野 寇晋华
Format: Article
Language:English
Subjects:
Lasers
Optical Devices
Optics
Photonics
Physics
Physics and Astronomy
信封
倍频晶体
拉曼激光器
掺钕
被动Q开关
重复率
钒酸盐
锁模
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Summary:In this paper, a passively Q-switched and mode-locked c-cut Nd-doped vanadate crystal self-Raman laser at 1.17 μm is firstly demonstrated by using Cr^4＋：YAG. Two crystals of Nd^3＋：YVO4 and Nd^3＋：Gd VO4 are adopted to generate laser, respectively. With the incident pump power of 13 W, the average output powers of 678 m W and 852 m W at 1.17 μm are obtained with the durations of Q-switched envelope of 1.8 ns and 2 ns, respectively. The mode-locked repetition rates are as high as 2.3 Hz and 2.2 GHz, respectively. As far as we know, the Q-switched envelope is the narrowest and the mode-locked repetition rate is the highest at present in this field. In addition, yellow laser output is also achieved by using the Li B3O5 frequency doubling crystal.
ISSN:1673-1905
1993-5013
DOI:10.1007/s11801-014-4155-y