Effects of Mg-doping concentration on the characteristics of InGaN based solar cells

A major challenge in GaN based solar cell design is the lack of holes compared with electrons in the multiple quantum wells (MQWs). We find that GaN based MQW photovoltaic devices with five different Mg-doping concentrations of 0 cm −3 , 5×1017 cm −3 , 2×10 18 cm −3 , 4×10 18 cm −3 and 7×10 18 cm −3...

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Bibliographic Details
Published in:Optoelectronics letters 2015-09, Vol.11 (5), p.348-351
Main Authors: Lu, Gang, Wang, Bo, Ge, Yun-wang
Format: Article
Language:English
Subjects:
Lasers
Optical Devices
Optics
Photonics
Physics
Physics and Astronomy
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Summary:A major challenge in GaN based solar cell design is the lack of holes compared with electrons in the multiple quantum wells (MQWs). We find that GaN based MQW photovoltaic devices with five different Mg-doping concentrations of 0 cm −3 , 5×1017 cm −3 , 2×10 18 cm −3 , 4×10 18 cm −3 and 7×10 18 cm −3 in GaN barriers can lead to different hole concentrations in quantum wells (QWs). However, when the Mg-doping concentration is over 1×10 18 cm −3 , the crystal quality degrades, which results in the reduction of the external quantum efficiency ( EQE ), short circuit current density and open circuit voltage. As a result, the sample with a slight Mg-doping concentration of 5×10 17 cm −3 exhibits the highest conversion efficiency.
ISSN:1673-1905
1993-5013
DOI:10.1007/s11801-015-5100-4