Effect of Electron Beam Irradiation on Structural and Optical Properties of Cu-Doped In2O3 Films Prepared by RF Magnetron Sputtering

Undoped and Cu-doped In 2 O 3 films were prepared by radiofrequency magnetron sputtering technique. The effects of Cu doping and high-energy electron beam irradiation on the structural and optical properties of as-prepared films were investigated using techniques such as x-ray diffraction, x-ray pho...

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Bibliographic Details
Published in:JOM (1989) 2018-05, Vol.70 (5), p.739-746
Main Authors: Krishnan, R. Reshmi, Sanjeev, Ganesh, Prabhu, Radhakrishna, Pillai, V. P. Mahadevan
Format: Article
Language:English
Subjects:
Chemistry/Food Science
Earth Sciences
Engineering
Environment
Physics
Technical Communication
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Summary:Undoped and Cu-doped In 2 O 3 films were prepared by radiofrequency magnetron sputtering technique. The effects of Cu doping and high-energy electron beam irradiation on the structural and optical properties of as-prepared films were investigated using techniques such as x-ray diffraction, x-ray photoelectron spectroscopy (XPS), lateral scanning electron microscopic image analysis, energy-dispersive x-ray (EDX) spectroscopy, micro-Raman, and ultraviolet–visible (UV–vis) spectroscopy. Moderate doping of Cu in In 2 O 3 enhanced the intensity of (222) peak, indicating alignment of crystalline grains along . Electron beam irradiation promoted orientation of crystalline grains along in undoped and moderately Cu-doped films. EDX spectroscopic and XPS analyses revealed incorporation of Cu 2+ ions in the lattice. The transmittance of Cu-doped films decreased with e-beam irradiation. Systematic reduction of the bandgap energy with increase in Cu doping concentration was seen in unirradiated and electron-beam-irradiated films.
ISSN:1047-4838
1543-1851
DOI:10.1007/s11837-018-2776-5