Transport and stability studies on high band gap a-Si:H films prepared by argon dilution

Device quality hydrogenated amorphous silicon films (a-Si:H) are deposited at a high deposition rate (4–5 Å/s) using a mixture of argon and hydrogen-diluted silane. The films exhibit good opto-electronic properties and show less degradation upon light soaking. Light-induced changes in conductivity c...

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Bibliographic Details
Published in:Pramāṇa 2008-02, Vol.70 (2), p.351-358
Main Authors: Gogoi, Purabi, Dixit, P. N., Agarwal, Pratima
Format: Article
Language:English
Subjects:
Astronomy
Astrophysics and Astroparticles
Observations and Techniques
Physics
Physics and Astronomy
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Summary:Device quality hydrogenated amorphous silicon films (a-Si:H) are deposited at a high deposition rate (4–5 Å/s) using a mixture of argon and hydrogen-diluted silane. The films exhibit good opto-electronic properties and show less degradation upon light soaking. Light-induced changes in conductivity could be annealed at much lower temperature. The presence of Ar * and atomic hydrogen in plasma replaces the weak Si-Si bonds, which are responsible for light-induced degradation by strong Si-Si bonds. This results in the improved stability of the films.
ISSN:0304-4289
0973-7111
DOI:10.1007/s12043-008-0053-9