Growth of phosphorus-doped p-type ZnO thin films by MOCVD

Phosphorus-doped p-type ZnO thin films are prepared on glass substrates by metalorganic chemical vapor deposition (MOCVD). DEZn, O 2 , and P 2 O 5 powders are used as reactant and dopant sources. The p-type ZnO films are grown at a temperature between 673 K and 723 K. The best p-type sample has a lo...

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Bibliographic Details
Published in:Frontiers of optoelectronics in China 2008, Vol.1 (1-2), p.147-150
Main Authors: Ye, Zhizhen, Wang, Jingrui, Wu, Yazhen, Zhou, Xincui, Chen, Fugang, Xu, Weizhong, Miao, Yan, Huang, Jingyun, Lü, Jianguo, Zhu, Liping, Zhao, Binghui
Format: Article
Language:English
Subjects:
Biomedical Engineering and Bioengineering
Electrical Engineering
Engineering
Physics
Research Article
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Summary:Phosphorus-doped p-type ZnO thin films are prepared on glass substrates by metalorganic chemical vapor deposition (MOCVD). DEZn, O 2 , and P 2 O 5 powders are used as reactant and dopant sources. The p-type ZnO films are grown at a temperature between 673 K and 723 K. The best p-type sample has a low resistivity of 4.64 Ω·cm, a hole concentration of 1.61 × 10 18 cm −3 , and a Hall mobility of 0.838 cm 2 ·(V·s) −1 at room temperature. A strong emission peak at 3.354 eV corresponding to neutral acceptor bound excitons is observed at 77 K in the photoluminescence spectra, which further verifies the p-type characteristics of the films.
ISSN:1674-4128
1674-4594
DOI:10.1007/s12200-008-0024-2