Photoluminescent properties of nc-Si/SiOx nanosystems

In this work the nc-Si/SiO x nanosystems were obtained on the silicon substrate by means of evaporation of silicon powder in an oxidizing atmosphere. Then deposited SiO x films were irradiated from 226 Ra isotope and were annealed at 1000 °C to grow nc-Si. By means of the ellipsometric technique we...

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Bibliographic Details
Published in:Applied nanoscience 2019-07, Vol.9 (5), p.781-786
Main Authors: Olenych, Igor B., Monastyrskii, Liubomyr S., Boyko, Yaroslav V., Luchechko, Andriy P., Kostruba, Andriy M.
Format: Article
Language:English
Subjects:
Chemistry and Materials Science
Materials Science
Membrane Biology
Nanochemistry
Nanotechnology
Nanotechnology and Microengineering
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Summary:In this work the nc-Si/SiO x nanosystems were obtained on the silicon substrate by means of evaporation of silicon powder in an oxidizing atmosphere. Then deposited SiO x films were irradiated from 226 Ra isotope and were annealed at 1000 °C to grow nc-Si. By means of the ellipsometric technique we studied the effect of annealing duration and irradiation on the optical characteristics of nc-Si/SiO x films. It was found that irradiation of obtained films promotes visible photoluminescence witdh maximum near 740 nm. More effective photon emission is caused by the change of nc-Si passivation conditions. Obtained experimental and theoretical results show the important influence of the Si/SiO x interface on the light emitting properties of nc-Si.
ISSN:2190-5509
2190-5517
DOI:10.1007/s13204-018-0701-4