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Dye-sensitized solar cells, based on electrochemically functionalized porphyrins

The applications of electrochemically functionalized porphyrin have been considered in dye-sensitized solar cells (DSSCs). A porphyrin-catechol derivative has been electrochemically functionalized with a sulfur-contained, 2-mercaptobenzothiazole moiety and was tested as dye. Catechol moiety acts as...

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Published in:Journal of the Iranian Chemical Society 2016-07, Vol.13 (7), p.1357-1365
Main Authors: Adineh, Maryam, Tahay, Pooya, Shahrjerdi, Akram, Davarani, Seyed Saeed Hoseini, Safari, Nasser
Format: Article
Language:English
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Summary:The applications of electrochemically functionalized porphyrin have been considered in dye-sensitized solar cells (DSSCs). A porphyrin-catechol derivative has been electrochemically functionalized with a sulfur-contained, 2-mercaptobenzothiazole moiety and was tested as dye. Catechol moiety acts as the anchoring group in these types of dyes. The IPCE result confirmed that photocurrents for DSSCs based on porphyrin-catechol dyes are mainly generated by an indirect electron injection pathway (Type I mechanism).The cells made with this porphyrin were stable and showed no significant desorption of dye from the TiO 2 surface after days. Electrochemically functionalized porphyrin-catechol showed almost 100 % enhancement in efficiency compared to bare porphyrin-catechol. The effect of different additives on cell performance was also tested. Electrochemically functionalized porphyrin catechol, in the presence of chenodeoxycholic acid had a record performance with a conversion efficiency of 0.6 % under AM 1.5 irradiation. Graphical abstract A porphyrincatechol derivative has been prepared via electrosynthesis with a sulfur contained, 2-mercaptobenzothiazole moiety and was tested as dye. Catechol moiety acts as the anchoring group in these types of dyes. The IPCE result confirmed that photocurrents for DSSCs based on porphyrincatechol dyes are mainly generated by an indirect electron-injection pathway (Type I mechanism).
ISSN:1735-207X
1735-2428
DOI:10.1007/s13738-016-0850-x