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Controlled synthesis of high-quality crystals of monolayer MoS2 for nanoelectronic device application
Two-dimensional layered materials have attracted significant interest for their potential applications in electronic and optoelectronics devices. Among them, transition metal dichalcogenides (TMDs), especially molybdenum disulfide (MoS 2 ), is extensively studied because of its unique properties. Mo...
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Published in: | Science China materials 2016-03, Vol.59 (3), p.182-190 |
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Main Authors: | , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | Two-dimensional layered materials have attracted significant interest for their potential applications in electronic and optoelectronics devices. Among them, transition metal dichalcogenides (TMDs), especially molybdenum disulfide (MoS
2
), is extensively studied because of its unique properties. Monolayer MoS
2
so far can be obtained by mechanical exfoliation or chemical vapor deposition (CVD). However, controllable synthesis of large area monolayer MoS
2
with high quality needs to be improved and their growth mechanism requires more studies. Here we report a systematical study on controlled synthesis of high-quality monolayer MoS
2
single crystals using low pressure CVD. Large-size monolayer MoS
2
triangles with an edge length up to 405 μm were successfully synthesized. The Raman and photoluminescence spectroscopy studies indicate high homogenous optical characteristic of the synthesized monolayer MoS
2
triangles. The transmission electron microscopy results demonstrate that monolayer MoS
2
triangles are single crystals. The back-gated field effect transistors (FETs) fabricated using the as-grown monolayer MoS
2
show typical n-type semiconductor behaviors with carrier mobility up to 21.8 cm
2
V
−1
s
−1
, indicating excellent electronic property comparing with previously reported CVD grown MoS
2
monolayer. The MoS
2
FETs also show a high photoresponsivity of 7 A W
−1
, as well as a fast photo-response time of 20 ms. The improved synthesis method recommended here, which makes material preparation much easier, may strongly promote further research and potential applications. |
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ISSN: | 2095-8226 2199-4501 |
DOI: | 10.1007/s40843-016-0130-1 |