Dissociative chemisorption mechanisms of disilane on Si(100)-(2×1) and H-terminated Si(100) surfaces

Three different mechanisms for disilane (Si 2H 6) chemisorption on Si(100) are discussed, and experimental evidence is presented that is consistent with occurrence of all three under different conditions. Direct formation of chemisorbed SiH 2, in competition with formation of chemisorbed SiH 3, is p...

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Bibliographic Details
Published in:Chemical physics letters 1991-10, Vol.184 (5), p.448-454
Main Authors: Gates, S.M., Chiang, C.M.
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Mechanical and acoustical properties
adhesion
Physics
Solid surfaces and solid-solid interfaces
Solid-fluid interfaces
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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Summary:Three different mechanisms for disilane (Si 2H 6) chemisorption on Si(100) are discussed, and experimental evidence is presented that is consistent with occurrence of all three under different conditions. Direct formation of chemisorbed SiH 2, in competition with formation of chemisorbed SiH 3, is proposed on the clean surface. Direct recoiling results support chemisorption on H-terminated surfaces via insertion into SiH bonds at surface temperatures ( T s)=350°C and above. Estimates of enthalpy changes for each mechanism are given, based on the limited available bond-energy data.
ISSN:0009-2614
1873-4448
DOI:10.1016/0009-2614(91)80017-R