Formation of translationally hot ethene by dissociative electron capture of adsorbed 1,2-dichloroethane

Irradiation of sub-monolayer and 4 layers of adsorbed 1,2-dichloroethane (DCE) on Cu(111) at 110 K with a pulsed 2 keV electron beam causes hot ethene desorption with translational temperatures of 2350 ± 100 K (sub-monolayer), and 2540 ± 200 K and 320 ± 50 K (4 layers). DCE undergoes electron attach...

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Bibliographic Details
Published in:Chemical physics letters 1996-10, Vol.261 (4), p.539-544
Main Authors: Jones, Robert G., Turton, S., Ithnin, R.
Format: Article
Language:English
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Summary:Irradiation of sub-monolayer and 4 layers of adsorbed 1,2-dichloroethane (DCE) on Cu(111) at 110 K with a pulsed 2 keV electron beam causes hot ethene desorption with translational temperatures of 2350 ± 100 K (sub-monolayer), and 2540 ± 200 K and 320 ± 50 K (4 layers). DCE undergoes electron attachment from hot secondary electrons, dissociating to form a short-lived ClCH 2CH 2 radical which decomposes, generating the high temperature (2350 and 2540 K) ethene. The translational motion is thought to come from part of the heat liberated in the formation of the CuCl bond. The 320 K peak is assumed to arise from radical decomposition at the surface of DCE crystallites.
ISSN:0009-2614
1873-4448
DOI:10.1016/0009-2614(96)01018-4