N-channel accumulation layer MOSFET operating at 4 K

An accumulation layer n-channel MOSFET that operates at 4 K has been fabricated. Sharp hysteretic current kinks in the I– V characteristic are observed, where the transistor switches discontinuously between two well defined states. The kinks are modelled in terms of changes in the device potential c...

Full description

Saved in:
Bibliographic Details
Published in:Cryogenics (Guildford) 1990-12, Vol.30 (12), p.1069-1073
Main Authors: Ghosh, Ruby N., Silsbee, Robert H.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
hysteresis
low temperature electronics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
transistors
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:An accumulation layer n-channel MOSFET that operates at 4 K has been fabricated. Sharp hysteretic current kinks in the I– V characteristic are observed, where the transistor switches discontinuously between two well defined states. The kinks are modelled in terms of changes in the device potential configuration due to holes generated by avalanche breakdown in the high electric field region near pinch off. Noise measurements which elucidate the physical mechanisms causing the current kinks are presented.
ISSN:0011-2275
1879-2235
DOI:10.1016/0011-2275(90)90209-U