Monte Carlo simulation of polynuclear growth mechanism with nucleation on active sites

The Monte Carlo simulation technique is applied to study the polynuclear mechanism of crystal growth when nulceation occurs at a limited number of active sites. The effect of overlay of existing active sites for nucleation by the growing layer is estimated and the theoretical equations concerning th...

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Bibliographic Details
Published in:Electrochimica acta 1988-04, Vol.33 (4), p.487-492
Main Author: Obretenov, W.
Format: Article
Language:English
Subjects:
Adsorption
Chemistry
Electrochemistry
Electrodeposition
Exact sciences and technology
General and physical chemistry
Study of interfaces
Transport phenomena
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Summary:The Monte Carlo simulation technique is applied to study the polynuclear mechanism of crystal growth when nulceation occurs at a limited number of active sites. The effect of overlay of existing active sites for nucleation by the growing layer is estimated and the theoretical equations concerning that effect are verified. The influence of the surface area edges on the transient of surface coverage is quantitatively estimated. It is found that this influence may become negligible if the layer is formed from at least 200 nuclei, which is in agreement with other estimates[9, 10]. Growth rate transients for layer by layer polynuclear growth with active sites for nucleation are calculated and compared with the homogeneous nucleation transient and with previous calculations[4].
ISSN:0013-4686
1873-3859
DOI:10.1016/0013-4686(88)80165-8