Optical effect on GaAs MESFETs

The possibility of using MESFETs for high speed photodetection and switching is being actively investigated by various workers at present. In this paper an attempt is made to theoretically evaluate the light generated voltage due to the optical radiation (0.87 μm) falling on the Schottky junction ga...

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Bibliographic Details
Published in:Infrared physics 1983-01, Vol.23 (2), p.65-68
Main Authors: Chaturvedi, G.J., Purohit, R.K., Sharma, B.L.
Format: Article
Language:English
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Summary:The possibility of using MESFETs for high speed photodetection and switching is being actively investigated by various workers at present. In this paper an attempt is made to theoretically evaluate the light generated voltage due to the optical radiation (0.87 μm) falling on the Schottky junction gate. Using these results the d.c. characteristics in darkness and under illumination are calculated and presented in this paper. It is shown that the maximum optical gain can be obtained by illuminating a normally-off MESFET (i.e. kept in pinch-off condition). Suitable Schottky configurations, which are light transparent, are also suggested.
ISSN:0020-0891
DOI:10.1016/0020-0891(83)90014-3