Deep levels and persistent photoconductivity effects in undoped p-type PbTe films

High photosensitivity p-type PbTe layers have been grown by an electron-beam evaporation method. Time-resoved Hall effect and conductivity measurements showed a logarithmic photoconductivity behaviour for time periods between 10 1 and 10 5s. Extrapolation of the decay- to dark conductivity yields a...

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Bibliographic Details
Published in:Infrared physics 1991, Vol.31 (2), p.199-205
Main Authors: Maksimov, M.H., Vassilev, L.V., Besedin, Yu.G., Dyakov, T.
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electronic transport in condensed matter
Exact sciences and technology
Photoconduction and photovoltaic effects
photodielectric effects
Physics
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Summary:High photosensitivity p-type PbTe layers have been grown by an electron-beam evaporation method. Time-resoved Hall effect and conductivity measurements showed a logarithmic photoconductivity behaviour for time periods between 10 1 and 10 5s. Extrapolation of the decay- to dark conductivity yields a total lifetime of the photoconductivity more than 10 7s at 77 K. The time constant decreases significantly at higher temperatures. The experimental results are interpreted in terms of a tunneling-assisted recombination of the persistent holes with spatially distributed trapped electrons.
ISSN:0020-0891
DOI:10.1016/0020-0891(91)90070-V