Finite-difference numerical methods for solving the energy-momentum transport equations in two-valley semiconductors

Two finite-difference methods for solving the energy-momentum transport equations for electrons in two-valley semiconductors are analyzed. For each method, stability analyses are carried out including the electric field terms and relaxation terms in the equations. Results of large-signal simulations...

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Bibliographic Details
Published in:Journal of computational physics 1985, Vol.59 (3), p.456-467
Main Authors: Mains, R.K, El-Gabaly, M.A, Haddad, G.I
Format: Article
Language:English
Subjects:
Applied sciences
Diodes
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:Two finite-difference methods for solving the energy-momentum transport equations for electrons in two-valley semiconductors are analyzed. For each method, stability analyses are carried out including the electric field terms and relaxation terms in the equations. Results of large-signal simulations of GaAs IMPATTs using these numerical methods are presented and compared.
ISSN:0021-9991
1090-2716
DOI:10.1016/0021-9991(85)90122-6